DMS3016SSSA-13

$0.48

Description：MOSFET N-CH 30V 9.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0c118b6c2ad6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 9.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1849 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：1.54W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMS3016SSSA-13

Overview

The DMS3016SSSA-13 is an N-channel enhancement mode MOSFET with an integrated Schottky diode, manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 8.9A at +25°C. The static drain-source on-resistance (RDS(ON)) is 13mΩ at VGS=10V and 16mΩ at VGS=4.5V. The device utilizes a patented DIOFET process to monolithically integrate the MOSFET and Schottky in a single die, offering low conduction losses and reduced switching losses. It is housed in an SO-8 package.

Feature Summary

DIOFET technology integrates a MOSFET and Schottky diode in a single die for high efficiency.
Low RDS(ON) minimizes conduction losses during operation.
Ultra-low VSD reduces power loss due to body diode conduction.
Low Qrr of the integrated Schottky decreases body diode switching losses.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated distributors or certified supply chain partners. Confirm RoHS compliance and lead-free status against current regulatory standards. Ensure packaging integrity matches the specified tape and reel format. Validate datasheet revision and marking codes against official documentation prior to procurement.

Selection Notes

Select this component for applications requiring high-efficiency power management where low conduction and switching losses are critical. The integrated Schottky diode eliminates the need for external components, reducing board space. Consider the SO-8 package constraints and thermal resistance characteristics when designing heat dissipation strategies for the target application environment.

Part Context

The DMS3016SSSA belongs to the DMS series of DIOFETs from Diodes Incorporated. This series combines MOSFET and Schottky technologies to optimize performance in compact packages. The specific model targets high-frequency switching applications, leveraging the patented integration process to enhance reliability and reduce overall system complexity compared to discrete solutions.

Replacement Considerations

The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART. No verified substitute part numbers are provided in the official documentation.