DMT10H009LCG-7

$1.47

Description：MOSFET N-CH 100V 12.4A/47A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d048016c780a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 12.4A/47A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12.4A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.2 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT10H009LCG-7

Overview

The DMT10H009LCG-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 8.8mΩ at VGS=10V and 12.9mΩ at VGS=4.5V, supporting continuous drain currents of 47A at TC=+25°C and 39A at VGS=4.5V. The device utilizes a V-DFN3333-8 package with NiPdAu terminal finish. Key electrical parameters include a gate threshold voltage range of 1.1V to 2.5V, total gate charge of 40.2nC at VGS=10V, and a maximum operating temperature of +150°C.

Feature Summary

High conversion efficiency achieved through minimized on-state losses via low RDS(ON).
Superior switching performance supported by fast switching speed and low input capacitance.
Robust reliability ensured by 100% Unclamped Inductive Switch (UIS) testing in production.

Applications

Notebook battery power management
Load switch applications
Backlighting circuits
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (-7 for 2,000 units or -13 for 3,000 units) against your required packing quantity. Confirm that the V-DFN3333-8 (Type B) package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS 3 and REACH directives if applicable to your manufacturing region. Validate thermal dissipation capabilities based on your specific board layout and copper area constraints.

Selection Notes

Select this component when a 100V rating is required alongside high current handling capabilities in a compact surface-mount form factor. The low gate charge supports efficient drive requirements in portable electronics. Consider the thermal resistance characteristics relative to your expected ambient temperatures and duty cycles. Verify that the V-DFN3333-8 package is suitable for your automated assembly processes.

Part Context

This part belongs to Diodes Incorporated's new generation of N-channel enhancement mode MOSFETs designed to balance low on-resistance with fast switching speeds. It is specifically engineered for portable computing and power management systems where space and efficiency are critical constraints.

Replacement Considerations

Consult official Diodes Incorporated documentation for qualified substitutes. Cross-reference pinouts and thermal characteristics carefully when evaluating alternative packages or manufacturers.

FAQ

Is the DMT10H009LCG-7 compliant with automotive standards?

For automotive applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.