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Product Detailed Parameters
- Description：MOSFET N-CH 100V 13A/50A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2361 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT10H009LFG-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 8.5mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. The device supports a continuous drain current of 50A at TC=+25°C and 40A at TC=+70°C, with a maximum pulsed drain current of 200A. Total power dissipation reaches 30W at TC=+25°C. It utilizes the PowerDI3333-8 package and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
- 100% unclamped inductive switching (UIS) tested in production to ensure more reliable and robust end application performance.
Applications
- Synchronous Rectifier
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS, halogen-free, and antimony-free status against project specifications. Ensure the PowerDI3333-8 package dimensions align with the target PCB footprint layout.
Selection Notes
Select this component when low conduction losses are critical alongside compact physical size constraints. Evaluate thermal management needs based on the 3.8 °C/W junction-to-case thermal resistance. Consider gate threshold voltage variations across temperatures for logic compatibility in control circuits.
Part Context
This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for power management applications requiring high efficiency and small footprints. The PowerDI3333-8 package provides a balance between electrical performance and board space optimization.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence without design modification.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is 200A, measured with a 10µs pulse duration and a 1% duty cycle.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 manufacturing, contact Diodes Incorporated or a local representative directly.
