DMT10H009LK3-13

$1.33

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2cc9b0cace56 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H009LK3-13

Overview

The DMT10H009LK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 90A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is specified as a maximum of 9mΩ at VGS = 10V with ID = 20A, and 13mΩ at VGS = 4.5V with ID = 5A. Total gate charge (Qg) is typically 20nC at VDD = 50V, ID = 20A, and VGS = 4.5V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Features low on-resistance to minimize power losses during conduction.
Designed with low gate charge to reduce switching losses.
Undergoes 100% unclamped inductive switching (UIS) testing in production for reliability.

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free if environmental compliance is required for the assembly process. Ensure the TO252 (DPAK) package dimensions align with the intended PCB footprint layout.

Selection Notes

Select this component when a 100V rating is required alongside high current handling capabilities up to 90A. Consider the thermal resistance characteristics and the necessity for adequate heatsinking or copper plane area to manage power dissipation effectively. Evaluate the gate drive voltage requirements against the specified RDS(ON) thresholds at 4.5V and 10V to ensure optimal efficiency.

Part Context

This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high-efficiency power management applications requiring robust performance. The product utilizes a TO252 (DPAK) case constructed from molded plastic with a matte tin annealed over copper leadframe finish.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify electrical parameters such as BVDSS, RDS(ON), and package compatibility before substitution.