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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT10H009LPS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package and offers a maximum drain-source on-resistance of 8mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. The device supports a continuous drain current of 10A at TA=+25°C and up to 90A at TC=+25°C. Key electrical parameters include a gate threshold voltage ranging from 1.2V to 2.5V, total gate charge of 40.2nC at VGS=10V, and an operating temperature range of -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with less than 1.1mm profile for thin applications
- Low RDS(ON) characteristics that minimize on-state losses
- Fast switching speed combined with low input capacitance
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Motor controls
- DC-DC converters
- Notebook battery power management
- Load switches
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer or authorized distributors before procurement.
Selection Notes
Evaluate thermal resistance values based on the intended mounting conditions, distinguishing between junction-to-ambient and junction-to-case ratings. Ensure the application's gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This component belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to provide high conversion efficiency and superior switching performance while maintaining low on-state resistance within the PowerDI surface-mount package family.
Replacement Considerations
Consult official datasheets for cross-referencing. Verify pinout compatibility, specifically the source-drain-gate configuration in the PowerDI5060-8 package, and ensure voltage and current ratings meet or exceed original design specifications.
