DMT10H009LSSQ-13

$0.37

Description：MOSFET BVDSS: 61V~100V SO-8 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fb8ae5abd3f9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V SO-8 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT10H009LSSQ-13

Overview

The DMT10H009LSSQ is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 100V and an on-resistance of 9mΩ at VGS=10V, supporting a continuous drain current of 13A at TA=25°C. The device operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
High conversion efficiency through minimized on-state losses
Fast switching speed supported by low input capacitance
Ensures robust end-application reliability via 100% UIS testing

Applications

High-frequency switching
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS and halogen-free requirements for your target market. Ensure the selected part number aligns with the intended manufacturing facility's IATF 16949 certification status.

Selection Notes

Select this component when designing circuits requiring high reliability under automotive environmental conditions. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating junction temperatures. Evaluate the gate charge parameters against the driving circuit capabilities to ensure optimal switching performance.

Part Context

This MOSFET belongs to the DMT10 series from Diodes Incorporated, specifically engineered to meet stringent automotive industry standards. It utilizes a molded plastic green molding compound and matte tin annealed terminal finish over a copper leadframe, ensuring compliance with environmental directives while maintaining solderability.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pin configurations and electrical ratings carefully before integrating any substitute components into existing designs.