DMT10H009SCG-13

$0.31

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0492593b83ac Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT10H009SCG-13

Overview

The DMT10H009SCG-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 9.5mΩ at VGS=10V and a continuous drain current of 48A at TC=25°C. The device utilizes a V-DFN3333-8 (Type B) surface-mount package with NiPdAu terminal finish. Key electrical parameters include a gate threshold voltage range of 2V to 4V, total gate charge of 30nC, and an operating temperature range from -55°C to +150°C.

Feature Summary

Designed for high conversion efficiency with minimized on-state losses through low RDS(ON).
Capable of handling unclamped inductive switching events as verified by production testing.
Provides fast switching speed supported by low input capacitance characteristics.

Applications

Notebook battery power management systems
Load switch circuits
Backlighting drivers
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the application environment remains within the specified thermal limits and does not exceed the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component when a compact V-DFN3333-8 footprint is required for 100V applications. The device offers a balance between low conduction losses and fast switching performance suitable for portable electronics. Consider the thermal resistance values relative to the PCB copper area available for heat dissipation during steady-state operation.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-resistance while maintaining superior switching capabilities. The specific model utilizes a molded plastic case material classified as UL 94V-0 flammability rated.

Replacement Considerations

The datasheet lists DMT10H009SCG-7 as a variant with identical electrical specifications but packaged in 2000-unit tape and reels instead of 3000 units.

FAQ

Is the DMT10H009SCG-13 qualified for automotive applications?

The standard DMT10H009SCG-13 is not explicitly listed as AEC-Q101 qualified. Automotive-specific parts requiring change control and IATF 16949 manufacturing must be requested directly from Diodes Incorporated representatives.