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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT10H009SPS-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features an 8.5mΩ maximum on-resistance at VGS=10V and supports an 80A continuous drain current at TC=25°C. The device has a ±20V gate-source voltage rating, operates from -55°C to +150°C, and includes a body diode with a 1.2V forward voltage. Electrical characteristics include a 100V breakdown voltage, 30nC total gate charge at VGS=10V, and a junction-to-case thermal resistance of 1.5°C/W.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- High conversion efficiency with minimized on-state losses
- 100% unclamped inductive switching (UIS) tested in production for robustness
- Low input capacitance and fast switching speed
Applications
- Motor control
- DC-DC converters
- Notebook battery power management
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the PowerDI5060-8/SWP variant matches the intended PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by the end product regulations. Validate the AEC-Q100 qualification status directly with Diodes Incorporated for automotive deployment.
Selection Notes
Select this component when a low-profile surface-mount solution is required for high-current switching applications. The 100V rating provides adequate headroom for standard 48V or lower bus systems. Evaluate the 8.5mΩ RDS(ON) against thermal constraints to ensure junction temperatures remain within the 150°C limit under steady-state conditions. Consider the 1.5°C/W thermal resistance for heatsinking strategies.
Part Context
This part belongs to the DMT10 series of N-channel MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon technology optimized for low on-resistance and superior switching performance. The PowerDI5060-8 package offers a compact form factor suitable for space-constrained consumer electronics and industrial designs.
Replacement Considerations
Consult Diodes Incorporated documentation for verified cross-reference part numbers. Verify pinout compatibility and thermal resistance values before substituting.
