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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V-100V SO-8 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H009SSS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 9.2mΩ at VGS=10V and a continuous drain current of 12A at TA=+25°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes an SO-8 package.
Feature Summary
- High conversion efficiency with minimized on-state losses
- Fast switching speed supported by low input capacitance
- Robust reliability ensured through 100% unclamped inductive switching testing
Applications
- High-frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units. Confirm that the SO-8 package material meets the required UL flammability classification rating of 94V-0 for your application environment. Ensure compliance with moisture sensitivity level 3 per J-STD-020 standards during storage and handling procedures.
Selection Notes
Select this component when designing power-management applications requiring high efficiency and superior switching performance. Evaluate thermal resistance parameters against your PCB copper area and ambient temperature conditions. Consider the gate threshold voltage characteristics to ensure compatibility with your intended drive voltage levels.
Part Context
This part belongs to the DMT10H009 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching capabilities. The product line targets high-efficiency power management solutions across various industrial and consumer electronics applications.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings or package types without verifying pin configurations and thermal characteristics.
