DMT10H010LSS-13

$1.42

Description：MOSFET N-CH 100V 11.5A/29.5A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:815eda27044b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 11.5A/29.5A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 29.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT10H010LSS-13

Overview

The DMT10H010LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a gate-source voltage (VGSS) rating of ±20V. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 8mΩ at VGS=10V and ID=13A, with a maximum of 9.5mΩ under the same conditions. Continuous drain current (ID) reaches 29.5A at TC=+25°C. Total gate charge (Qg) is typically 58.4nC. The component operates within a junction temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

Designed for high conversion efficiency with minimized on-state losses through low RDS(ON).
Capable of fast switching speeds supported by low input capacitance.
Qualified to AEC-Q101 standards for high reliability applications.
Verified for 100% unclamped inductive switching (UIS) performance during production.

Applications

Notebook battery power management systems
Load switch circuits
Backlighting drivers
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the SO-8 case material meets UL flammability classification rating 94V-0 requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 standards is maintained throughout the supply chain handling process.

Selection Notes

Select this component when a 100V N-channel MOSFET with low on-resistance is required for compact designs. The SO-8 package suits space-constrained PCB layouts. Evaluate thermal resistance parameters against the specific ambient temperature and duty cycle constraints of the target application to ensure safe operation within the specified junction temperature limits.

Part Context

This part belongs to the DMT10H010 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The family focuses on balancing low conduction losses with superior switching performance. The 'LSS' designation indicates the specific SO-8 plastic package variant, while the '-13' suffix denotes the standard tape and reel packaging format used for automated assembly processes.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinout configurations and thermal characteristics carefully before replacing components in existing designs.