DMT10H010LSSQ-13

$0.56

Description：MOSFET BVDSS: 61V~100V SO-8 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fd6bd8023ee7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V SO-8 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：58.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4166 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT10H010LSSQ-13

Overview

The DMT10H010LSSQ-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and an on-resistance of 9.5mΩ at VGS=10V, supporting a continuous drain current of 12A. The device operates within a temperature range of -55°C to +150°C and utilizes an SO-8 package.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Manufactured in IATF16949 certified facilities to meet specific change control requirements.
Features 100% unclamped inductive switching (UIS) testing in production for enhanced reliability.

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the component against the official datasheet DS44120 Rev. 4-2 to confirm specifications. Ensure compliance with RoHS 3 and REACH directives. Confirm that the SO-8 package matches the design requirements. Validate AEC-Q101 qualification status if used in automotive contexts.

Selection Notes

Select this component for designs requiring high conversion efficiency and low on-state losses. Consider its fast switching speed and low input capacitance for high-frequency applications. Verify thermal resistance values against the expected operating environment and load conditions.

Part Context

This part belongs to the DMTH10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for automotive-grade applications requiring robust performance and strict quality standards. The product line emphasizes reliability through comprehensive manufacturing certifications.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference electrical parameters such as RDS(ON), BVDSS, and package dimensions before implementation.