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Product Detailed Parameters
- Description：MOSFET N-CHANNEL 100V 50A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMT10H015LK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and a continuous drain current of 52.7A at a case temperature of +25°C. The device exhibits a maximum on-resistance of 15mΩ at VGS=10V and 20A, or 18mΩ at VGS=6V and 20A. Total power dissipation reaches 1.8W in free air and 2.9W with an attached heatsink. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability automotive applications
- Features low on-resistance to minimize conduction power losses
- Low gate charge characteristics reduce switching energy losses
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Power management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the component meets RoHS directives and is halogen and antimony-free as defined by the manufacturer's green product specifications. Ensure the TO-252 (DPAK) package dimensions align with your PCB footprint requirements.
Selection Notes
Select this component when a 100V N-channel MOSFET with high current handling capability is required. The low thermal resistance allows for efficient heat dissipation in compact designs. Verify that the gate drive voltage supports the specified RDS(ON) thresholds for optimal efficiency in your target application circuit.
Part Context
This part belongs to the DMT10 series of high-performance silicon N-channel MOSFETs. It utilizes advanced cell technology to achieve superior on-resistance per area. The device is designed for general-purpose power switching applications requiring robust performance and high reliability under varying thermal conditions.
Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package compatibility.
