DMT10H015LSS-13

$1.41

Description：MOSFET N-CH 100V 8.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:10db5f30461e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 8.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT10H015LSS-13

Overview

The DMT10H015LSS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an SO-8 surface-mount package with a maximum drain-source voltage of 100V and a continuous drain current of 8.3A at 25°C. The device exhibits a low on-resistance of 16mΩ at VGS=10V and 18mΩ at VGS=6V, supporting efficient power management. Operating temperatures range from -55°C to +150°C, with total power dissipation rated at 1.2W in free air.

Feature Summary

Designed for high conversion efficiency with minimized on-state losses through low RDS(ON).
Capable of handling unclamped inductive switching (UIS) events as verified by production testing.
Provides fast switching speeds supported by low input capacitance characteristics.

Applications

Notebook battery power management systems
Load switch circuits
DC-DC converters
Backlighting drivers

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the application design.

Selection Notes

Select this component when a 100V rating and SO-8 footprint are required for space-constrained designs. Evaluate thermal resistance values against the expected ambient temperature and copper pad layout to ensure junction temperatures remain within safe operating limits during continuous operation.

Part Context

This part belongs to the DMT10H015 series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a standard SO-8 case constructed from green molding compound. The device is fully RoHS compliant and halogen-free.

Replacement Considerations

Cross-reference with other Diodes Incorporated parts sharing the DMT10H015 prefix or identical SO-8 pinout configurations. Verify that any substitute maintains equivalent BVDSS, RDS(ON), and thermal performance metrics.