DMT10H032LDVW-13

$0.28

Description：MOSFET 2N-CH 100V 6.9A PWRDI3333
Series：-

SKU:261ed064b6b6 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 6.9A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
Power - Max：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
Grade：-
Qualification：-

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DMT10H032LDVW-13

Overview

The DMT10H032LDVW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. It utilizes the PowerDI3333-8/SWP surface-mount package with wettable flanks for improved solder joint inspection. The component operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Surface-mount construction utilizing the PowerDI3333-8/SWP package design.
Incorporates wettable flank technology to facilitate automated optical inspection of solder joints.
N-channel enhancement mode operation optimized for low on-resistance performance.

Applications

DC-DC converter circuits
Power management modules
Load switching applications

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm tape-and-reel quantities and packaging specifications. Ensure that the selected variant matches the required thermal and electrical ratings for the target application environment. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability status and compliance with relevant environmental directives such as RoHS.

Selection Notes

Select this component when a compact surface-mount solution with verified solderability is required. The wettable flank feature supports high-reliability assembly processes where visual inspection of side solder fillets is critical. Evaluate the thermal dissipation capabilities relative to the system's ambient conditions and heat sinking strategy to ensure the junction temperature remains within the specified operational limits during continuous load cycles.

Part Context

This device belongs to the DMT10 series of power MOSFETs from Diodes Incorporated, designed for efficient power switching in space-constrained environments. The series emphasizes low on-resistance and robust thermal performance within small footprint packages. The specific model integrates advanced packaging techniques to enhance reliability and manufacturability compared to standard surface-mount alternatives.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified equivalents. Ensure any replacement maintains compatibility with the PowerDI3333-8/SWP footprint and meets or exceeds the original electrical specifications.