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The DMTH10H032LFVWQ-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8(SWP)UX package. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive and 10 A current. Key electrical parameters include a gate charge (Qg) of 11.9 nC at 10 V, input capacitance (Ciss) of 683 pF at 50 V, and a threshold voltage (Vgs(th)) of 2.5 V max at 250 µA. It supports a maximum gate-source voltage of ±20 V and operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix 'Q' indicates automotive or qualified grade status against the official datasheet, as packaging codes like '-7' denote tape and reel quantities. Confirm RoHS3 compliance and REACH status directly from the manufacturer's declaration. Ensure the wettable flank package variant matches the PCB footprint requirements for automated optical inspection compatibility.
Select this component when a 100 V rating and high current capacity are required in a small surface-mount form factor. The wettable flank feature is critical for designs demanding rigorous quality control via AOI. Compare Rds(on) and Qg values against alternative packages to balance conduction losses and switching speeds for the specific application frequency.
This part belongs to the DMTH10 series of N-channel MOSFETs by Diodes Incorporated. The series utilizes advanced silicon technology to deliver low on-resistance in compact packages. The PowerDI3333-8 format provides a balance between thermal dissipation and board space efficiency, targeting modern portable and industrial power management systems.
Publicly confirmed substitutes include DMT10H032LDV-7 and DMTH10H032LFVW-13. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure the replacement part meets the same voltage, current, and package dimensional standards.