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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V U-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT10H032LFDF-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 32mΩ at VGS=10V and 46mΩ at VGS=4.5V, with continuous drain currents of 6A at 25°C and 5A at 70°C. The device utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile and a PCB footprint of 4mm². Electrical characteristics include a gate threshold voltage range of 1.3V to 2.5V, total gate charge of 11.9nC at VGS=10V, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Verified robustness through 100% Unclamped Inductive Switching (UIS) testing in production.
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel quantity as defined in the manufacturer's ordering information. Confirm that the U-DFN2020-6 (Type F) case material and NiPdAu terminal finish meet the required mechanical and solderability specifications for the target assembly process.
Selection Notes
Select this component when a low-profile surface-mount solution is required for 100V applications. The U-DFN2020-6 package provides a compact 4mm² footprint suitable for space-constrained designs. Ensure the driving circuit can supply sufficient gate voltage to achieve the lower 32mΩ on-resistance rating if minimizing conduction losses is critical.
Part Context
This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on balancing low on-resistance with fast switching capabilities. The 'DMT10H032LFDF' designation identifies the specific electrical parameters and the U-DFN2020-6 package type within this product family.
Replacement Considerations
Consult the manufacturer for automotive-grade equivalents or parts requiring specific change control. Verify pinout compatibility and thermal resistance values when substituting with other U-DFN2020-6 devices.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is 40A, based on a 10µs pulse duration and a 1% duty cycle.
Is the device qualified for automotive applications?
Standard versions are not explicitly listed as AEC-Q100/101/200 qualified; contact the manufacturer for parts specifically designed for automotive applications with PPAP capability.
