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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V U-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT10H032LFDF-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 6A at +25°C ambient temperature. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 32mΩ at VGS = 10V and 46mΩ at VGS = 4.5V. Packaged in a U-DFN2020-6 (Type F) case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Designed with a low profile of 0.6mm for space-constrained applications
- Includes 100% unclamped inductive switching (UIS) testing for reliability
- Compliant with RoHS directives and free of halogen and antimony
Applications
- Power management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a tape and reel quantity of 3,000 units per reel. Confirm that the required packaging format aligns with manufacturing equipment capabilities. Ensure compliance with environmental standards such as RoHS 3 if applicable to the target market. Cross-reference the datasheet revision number to ensure accurate electrical parameters are used during design validation.
Selection Notes
Select this component when a compact surface-mount solution is required for high-efficiency power management. The U-DFN2020-6 package provides a small PCB footprint of 4mm². Evaluate thermal requirements based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage characteristics for compatibility with available drive voltages. Verify that the 100V breakdown voltage meets the system's maximum operating conditions.
Part Context
This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The LFDF variant specifically utilizes the U-DFN2020-6 package type, distinguishing it from other casing options within the broader product family.
Replacement Considerations
DMT10H032LFDF-13 serves as an equivalent alternative with identical electrical specifications but differs in packaging quantity, offering 10,000 units per reel instead of 3,000.
