DMT10H032SDVW-7

DMT10H032SDVW-7

$0.33
  • Description:MOSFET 2N-CH 100V 6A PWRDI3333
  • Series:-

SKU:aa07b4ccdf0d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 6A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:544pF @ 50V
  • Power - Max:1.2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerDI3333-8 (SWP) (Type UXD)
  • Grade:-
  • Qualification:-

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DMT10H032SDVW-7

Overview

The DMT10H032SDVW-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 6.7 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 21 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 9.3 nC and an input capacitance (Ciss) of approximately 683 pF. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 package.

Feature Summary

  • Utilizes a compact PowerDI3333-8 surface-mount package optimized for high-density PCB layouts.
  • Provides low conduction losses through minimized on-resistance characteristics suitable for power switching.
  • Features fast switching capabilities supported by low gate charge metrics for efficient drive requirements.

Applications

  • DC-DC converter circuits requiring compact form factors
  • Load switch applications in portable electronic devices
  • Power management modules in automotive electronics

Procurement Notes

Verify the specific suffix 'SDVW' against the manufacturer's official datasheet to confirm pinout compatibility and thermal performance specifications. Ensure that the ordering quantity aligns with the standard reel packaging requirements defined by Diodes Incorporated for this specific part number variant.

Selection Notes

Select this component when a 100 V N-channel MOSFET is required in a small outline package. The 21 mΩ Rds(on) offers a balance between conduction loss and cost. Compare gate charge values against driver capabilities to ensure adequate switching speed without excessive drive current demands in the target application circuit.

Part Context

This part belongs to the DMT10H series of N-channel MOSFETs from Diodes Incorporated. The series focuses on providing robust performance in small packages like PowerDI. The 'DMT' prefix typically denotes standard plastic surface-mount technology, while the 'H' indicates the 100 V voltage class within the product family lineup.

Replacement Considerations

Direct substitutes may include parts from the same family with identical pinouts but different Rds(on) ratings, such as DMT10H020SDVW-7 or DMT10H040SDVW-7. Verify that any replacement maintains the same PowerDI3333-8 footprint and meets the 100 V Vdss requirement.

DMT10H032SDVW-7DMT10H032SDVW-7
$0.33
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