DMT10H032SDVWQ-13

DMT10H032SDVWQ-13

$0.31
  • Description:MOSFET 2N-CH 100V 6A PWRDI3333
  • Series:-

SKU:6d960a905510 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 6A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:544pF @ 50V
  • Power - Max:1.2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerDI3333-8 (SWP) (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMT10H032SDVWQ-13

Overview

The DMT10H032SDVWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100 V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device provides a continuous drain current of 6 A at ambient temperature and dissipates 1.2 W of power under the same conditions. Packaged in a surface-mount PowerDI3333-8 (SWP) format, it is designed for efficient switching applications requiring low on-state resistance.

Feature Summary

  • Dual N-channel configuration integrated into a single compact package
  • Low on-resistance design to minimize conduction losses
  • Production-tested for 100% unclamped inductive switching reliability

Applications

  • DC-DC converter circuits
  • Power management modules
  • Motor control systems

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm that the specific suffix Q indicates automotive-grade qualification if required by the application. Ensure storage and handling procedures comply with moisture sensitivity levels defined in the official datasheet to maintain device integrity prior to assembly.

Selection Notes

Select this component when space-constrained designs require two independent N-channel switches. The PowerDI3333-8 package offers thermal efficiency suitable for moderate power densities. Evaluate the 100 V rating against circuit voltage peaks and confirm that the 6 A current limit aligns with load requirements without excessive derating.

Part Context

This part belongs to the DMT10 series of high-performance MOSFETs from Diodes Incorporated. The series utilizes advanced silicon technology to achieve low RDS(ON) values within small footprints. The Q suffix typically denotes compliance with automotive reliability standards, distinguishing it from standard industrial variants within the same product family.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in the PowerDI3333-8 package with matching 100 V ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Diodes Incorporated documentation for equivalent performance metrics.

DMT10H032SDVWQ-13DMT10H032SDVWQ-13
$0.31
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