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The DMT10H032SDVWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100 V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device provides a continuous drain current of 6 A at ambient temperature and dissipates 1.2 W of power under the same conditions. Packaged in a surface-mount PowerDI3333-8 (SWP) format, it is designed for efficient switching applications requiring low on-state resistance.
Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm that the specific suffix Q indicates automotive-grade qualification if required by the application. Ensure storage and handling procedures comply with moisture sensitivity levels defined in the official datasheet to maintain device integrity prior to assembly.
Select this component when space-constrained designs require two independent N-channel switches. The PowerDI3333-8 package offers thermal efficiency suitable for moderate power densities. Evaluate the 100 V rating against circuit voltage peaks and confirm that the 6 A current limit aligns with load requirements without excessive derating.
This part belongs to the DMT10 series of high-performance MOSFETs from Diodes Incorporated. The series utilizes advanced silicon technology to achieve low RDS(ON) values within small footprints. The Q suffix typically denotes compliance with automotive reliability standards, distinguishing it from standard industrial variants within the same product family.
Direct substitutes include other dual N-channel MOSFETs in the PowerDI3333-8 package with matching 100 V ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Diodes Incorporated documentation for equivalent performance metrics.