DMT10H032SFVW-13

$0.19

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:afd3d3390da7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：544 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT10H032SFVW-13

Overview

The DMT10H032SFVW-13 is a 100 V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a PowerDI3333-8 (SWP) form factor. It features a maximum drain-source on-resistance of 32 mΩ at VGS = 10 V and supports a continuous drain current of 35 A at TC = +25°C. The device includes wettable flank terminals for improved optical inspection and is fully RoHS compliant.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features wettable flank terminals to enable improved optical inspection during manufacturing processes.
Small form factor thermally efficient package enables higher density end products.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements, before finalizing procurement decisions.

Selection Notes

Select this component when a compact footprint with high thermal efficiency is required for 100 V applications. Evaluate the 32 mΩ on-resistance and 35 A continuous current rating against the specific load requirements of the target circuit design.

Part Context

This part belongs to the DMT10 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which provides a robust surface-mount solution suitable for automated assembly and space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Ensure any replacement matches the original voltage, current, and thermal specifications without altering the intended circuit functionality.

FAQ

Is the DMT10H032SFVW-13 qualified for automotive applications?

For automotive applications requiring specific change control, such as AEC-Q100/101/200 qualification and IATF 16949 certified manufacturing, contact Diodes Incorporated directly.