DMT10H052LFDF-7

$0.14

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:00ce67d4f729 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：258 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT10H052LFDF-7

Overview

The DMT10H052LFDF-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 52mΩ at VGS=10V and 75mΩ at VGS=4.5V, supporting continuous drain currents of 5A and 4.1A respectively. The device utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile and a PCB footprint of 4mm². It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance and superior switching performance.
Manufactured in a low-profile 0.6mm U-DFN2020-6 package suitable for space-constrained designs.
Verified reliability through 100% Unclamped Inductive Switching (UIS) testing during production.
Compliant with RoHS standards and free from halogens and antimony.

Applications

Power-management functions
Battery-operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration. Confirm that the required automotive grade specifications are not needed, as this standard part lacks the Q-suffix associated with AEC-Q100/101 qualification and IATF 16949 manufacturing facilities. Ensure compatibility with the specified U-DFN2020-6 footprint.

Selection Notes

Select this component for applications requiring a compact 4mm² footprint and robust 100V blocking capability. The device offers optimized switching characteristics alongside low conduction losses. Verify that the thermal management design accommodates the specified thermal resistance values for both ambient and case-mounted operating conditions.

Part Context

This MOSFET belongs to the DMT10 series from Diodes Incorporated, engineered to balance low on-resistance with efficient switching. The product line targets modern power management solutions where size reduction and energy efficiency are critical constraints.

Replacement Considerations

Refer to the manufacturer's automotive grade listings for parts qualified to AEC-Q100/101/104/200 standards if automotive application requirements apply.

FAQ

Is the DMT10H052LFDF-7 qualified for automotive applications?

No, this specific part number is not qualified to AEC-Q100/101/104/200 standards. Automotive applications requiring specific change control should refer to the related automotive grade parts with the Q-suffix.