DMT10H072LFDFQ-13

$0.14

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:86e625c5bd04 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：228 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Download product information

DMT10H072LFDFQ-13

Overview

The DMT10H072LFDFQ-13 is a 100V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source on-resistance of 62mΩ at VGS=10V and 80mΩ at VGS=6V, with continuous drain currents of 4A at TA=+25°C and 3.5A at VGS=6V. The device has a gate threshold voltage range of 1V to 3V and a total gate charge of 4.5nC at VGS=10V. It operates within a temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Features a low profile case design suitable for space-constrained layouts.
Includes 100% unclamped inductive switching (UIS) testing for reliability.

Applications

Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units. Confirm that the U-DFN2020-6 package dimensions align with the PCB footprint requirements. Ensure the component meets RoHS 3 compliance specifications if mandated by the project regulations.

Selection Notes

Select this component when a compact 100V N-channel MOSFET is required for automotive or industrial environments. The low on-resistance supports efficient power switching, while the small footprint aids in miniaturization. Verify thermal dissipation capabilities against the expected load current and ambient operating conditions.

Part Context

This part belongs to the Diodes Incorporated DMT10H series of automotive-grade MOSFETs. It utilizes a lead-free, halogen-free green molding compound. The device is manufactured in IATF16949:2016 certified facilities, ensuring consistent quality for high-reliability electronic assemblies.

Replacement Considerations

Check datasheets for alternative parts offering identical 100V ratings and comparable RDS(ON) values. Ensure any substitute matches the U-DFN2020-6 package outline and pin configuration to maintain board compatibility without redesign.