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Product Detailed Parameters
- Description：MOSFET N-CH 100V 4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：228 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT10H072LFDFQ-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) surface-mount package. It features a drain-source voltage rating of 100V and a continuous drain current of 4A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 62mΩ at VGS=10V and 80mΩ at VGS=6V. Designed for automotive environments, it holds AEC-Q101 qualification and PPAP capability.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive application requirements
- Manufactured in IATF16949:2016 certified facilities ensuring specific change control compliance
- Verified reliability through 100% Unclamped Inductive Switching (UIS) testing during production
- Features a low profile 0.6mm case height suitable for space-constrained PCB layouts
Applications
- Power management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the component matches the exact part number DMT10H072LFDFQ-7 to ensure correct packaging quantity of 3,000 units per reel. Confirm that the U-DFN2020-6 (Type F) package variant aligns with your board design footprint. Ensure the supplier provides documentation confirming AEC-Q101 qualification and IATF16949 manufacturing origin as specified in the datasheet.
Selection Notes
Select this component when an automotive-grade N-channel MOSFET with a 100V rating is required. The U-DFN2020-6 package offers a compact 4mm² footprint ideal for low-profile designs. Consider the 62mΩ on-resistance for efficiency needs and verify gate drive compatibility with the specified threshold and charge characteristics.
Part Context
This device belongs to the DMT10 series of automotive MOSFETs produced by Diodes Incorporated. It utilizes silicon technology within a molded plastic green molding compound case. The product is lead-free, fully RoHS compliant, and halogen and antimony free, meeting strict environmental directives for modern electronic assemblies.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic cross-references may not preserve the specific AEC-Q101 qualification or IATF16949 manufacturing certification required for automotive applications.
