DMT10H072LFV-13

Overview

The DMT10H072LFV-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100 V and a gate-source voltage (VGSS) rating of ±20 V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 62 mΩ at VGS = 10 V and ID = 4.5 A, or 77 mΩ at VGS = 6 V and ID = 4 A. Continuous drain current reaches 20 A at TC = +25 °C. Total gate charge (Qg) is 4.5 nC at VGS = 10 V. The component operates within a junction temperature range of -55 °C to +150 °C and utilizes the PowerDI3333-8 surface-mount package.

Feature Summary

• Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Small form factor thermally efficient package enables higher density end products.
• Occupies just 33% of the board area occupied by SO-8 packages.
• Totally lead-free, fully RoHS compliant, halogen-free, and antimony-free.

Applications

• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, and Transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units per reel as defined in the manufacturer's ordering information. Confirm that the PowerDI3333-8 (Type UX) case material meets the required UL flammability classification rating of 94V-0 for the target application environment. Ensure compliance with moisture sensitivity level 1 per J-STD-020 standards during storage and handling procedures.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The PowerDI3333-8 package provides significant board area reduction compared to traditional SO-8 footprints. Verify that the 100 V BVDSS rating exceeds the maximum circuit voltage and that the thermal characteristics support the expected continuous drain current under the specific ambient operating conditions.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with fast switching speeds. The 'DMT10H072LFV' designation identifies the specific electrical parameters and package type, while the '-13' suffix indicates the standard tape and reel packaging configuration used for automated assembly processes.

Replacement Considerations

Consult the manufacturer's official documentation for verified equivalent parts. Cross-referencing requires matching critical specifications such as the 100 V breakdown voltage, 62 mΩ maximum on-resistance, and the PowerDI3333-8 physical footprint to ensure mechanical and electrical compatibility without design modification.

FAQ

What is the maximum continuous drain current at a case temperature of +25 °C?

The maximum continuous drain current is 20 A when the case temperature (TC) is maintained at +25 °C.

Does the device include an internal body diode?

Yes, the datasheet specifies characteristics for the internal body diode, including a forward voltage (VSD) and reverse recovery time (tRR).

What is the thermal resistance from junction to case?

The thermal resistance from junction to case (RθJC) is 3.3 °C/W.