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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V SOT223 T&
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：228 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-3
- Package / Case：TO-261-4, TO-261AA
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Overview
The DMT10H075LE-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a static drain-source on-resistance (RDS(ON)) of 65mΩ at VGS=10V, or 105mΩ at VGS=4.5V. The device supports a continuous drain current (ID) of 4A at TA=+25°C and 3A at TA=+70°C. Total gate charge (Qg) is 4.5nC at VGS=10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low gate drive requirements for efficient control
- Fast switching speed with low input capacitance
- High impedance operation free from thermal runaway
Applications
- Load Switching
- Uninterrupted Power Supply
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration in the SOT223 case. Confirm compliance with RoHS directives and halogen-free status if required for your manufacturing process. Ensure the component meets AEC-Q101 standards only if explicitly requested through authorized automotive channels.
Selection Notes
Select this component when a 100V rating and compact SOT223 footprint are required. Consider the RDS(ON) values at both 10V and 4.5V gate voltages to match your driver capability. Evaluate the 2.4W power dissipation limit against your ambient temperature conditions to ensure adequate thermal management without excessive heatsinking.
Part Context
This part belongs to the DMT10 series of N-channel MOSFETs from Diodes Incorporated. These devices are designed for general-purpose switching applications requiring high efficiency and reliability. The SOT223 package provides a balance between thermal performance and space-saving surface mount installation.
Replacement Considerations
Consult official Diodes documentation for verified equivalent parts. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package dimensions precisely.
