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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V-100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4843 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT10H4M5LPS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current rating of 100A at TC = +25°C. The device achieves a low static drain-source on-resistance (RDS(ON)) of 4.3mΩ max at VGS = 10V and ID = 30A, or 6.2mΩ max at VGS = 4.5V and ID = 20A. Total gate charge is 80nC max at VDD = 50V, ID = 30A, and VGS = 10V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
- Low RDS(ON) minimizes on-state power losses
- Fast switching speed with low input capacitance
Applications
- Motor control
- DC-DC converters
- Power management
- Notebook battery power management
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard PowerDI5060-8 package packed in tape and reel format with a quantity of 2,500 units. Confirm compliance requirements such as RoHS and Halogen-free status against project specifications before finalizing procurement orders.
Selection Notes
Select this component when high efficiency and robust inductive load handling are required. The low on-resistance supports high-current applications up to 100A at case temperature. Ensure thermal design accommodates the specified thermal resistance values for both ambient and case mounting conditions.
Part Context
This part belongs to the DMT10H series of advanced N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package designed for high-power density applications. The device represents a newer generation optimized for balancing low conduction losses with superior switching performance.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified cross-reference data. No substitute part numbers are confirmed in the provided source material.
