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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V PowerDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H4M9SPSW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP surface-mount packaging and operates with a drain-source voltage rating of 100V. The device features a maximum continuous drain current of 113A and a low on-resistance of 4.9 milliohms at room temperature. Gate-source voltage limits are specified at plus or minus 20V, while the threshold voltage typically reaches 2V. Thermal performance includes a power dissipation capacity of 139W and an operating junction temperature range from -55°C to +150°C.
Feature Summary
- High current handling capability suitable for demanding power switching applications
- Low on-resistance design minimizes conduction losses in high-efficiency circuits
- Robust thermal management through advanced surface-mount package technology
Applications
- DC-DC converter output stages
- Motor control bridge circuits
- Power distribution modules
Procurement Notes
Verify component authenticity against official Diodes Incorporated datasheets before integration. Confirm that the specific suffix matches required reel quantities and tape specifications. Ensure storage conditions comply with moisture sensitivity levels defined in the manufacturing documentation. Cross-reference pin assignments with verified ECAD models to prevent layout errors during PCB assembly processes.
Selection Notes
Select this component when circuit requirements demand high current density within compact footprints. Evaluate thermal resistance values against system heat sinking capabilities. Compare gate charge parameters against driver strength limitations. Assess breakdown voltage margins relative to supply rail transients. Validate package compatibility with existing automated placement equipment constraints.
Part Context
This part belongs to the DMT series of silicon N-channel MOSFETs designed for general-purpose power switching. The manufacturer utilizes proprietary cell architecture to achieve low resistance characteristics. The PowerDI package family provides improved thermal performance compared to traditional leaded alternatives. This specific model targets applications requiring robust current handling in space-constrained environments.
Replacement Considerations
Consult official substitution guides for electrically equivalent parts with matching pinouts. Verify that alternative components maintain identical package dimensions and thermal characteristics. Ensure replacement devices meet the same voltage and current ratings without compromising circuit safety margins.
