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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V SO-8 T&R
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H9M9LSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SO-8 package. The device features a drain-source breakdown voltage (BVDSS) within the 61V to 100V range, with a continuous drain current rating of 10A. Its on-resistance is specified at 9 milliohms, and it operates with a gate-source voltage range of -20V to +20V. The component supports a junction temperature up to 150°C and includes AEC-Q101 qualification for automotive reliability standards.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance design for efficient power switching
- Surface-mount construction for automated assembly
Applications
- Automotive power distribution systems
- High-side load switch applications
- DC-DC converter circuits
Procurement Notes
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix indicates the correct tape-and-reel packaging quantity. Ensure compliance with RoHS directives and check for any specific automotive qualification requirements relevant to your application environment.
Selection Notes
Select this component when a robust N-channel MOSFET with low conduction losses is required for automotive or industrial environments. The SO-8 package offers a balance between thermal performance and board space efficiency. Consider the 10A current rating and 9mOhm resistance for appropriate heat dissipation management in your circuit design.
Part Context
This part belongs to the DMT series of power MOSFETs from Diodes Incorporated, designed for high-efficiency switching applications. The series typically targets automotive and general-purpose power management needs, offering various packages and electrical ratings to suit different current and voltage requirements in modern electronic systems.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement matches the SO-8 footprint, pin configuration, and electrical specifications such as VDS, ID, and RDS(on). Verify that alternative parts also meet AEC-Q101 standards if automotive use is intended.
