DMT10H9M9SCT

$0.77

Description：MOSFET BVDSS: 61V~100V TO220AB T
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:ef230653fcf4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V TO220AB T
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMT10H9M9SCT

Overview

The DMT10H9M9SCT is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TO-220AB package. It features an on-resistance of 8.8mΩ at VGS=10V and 16mΩ at VGS=6V, supporting continuous drain currents of 99A at TC=+25°C and 73A at TC=+70°C. The device has a maximum gate-source voltage of ±20V, a total power dissipation of 156W at TC=+25°C, and a thermal resistance junction-to-case of 0.8°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low input capacitance for fast switching performance
High breakdown voltage rating suitable for demanding power applications
Low input and output leakage current characteristics
Lead-free finish with RoHS compliance and halogen/antimony-free construction

Applications

Motor control systems
Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix SCT corresponds to the tube carrier packaging containing 50 pieces per unit. Confirm that the component meets the required environmental standards, including RoHS directives and the manufacturer's definitions for halogen and antimony-free green devices. Ensure the selected part number matches the exact electrical ratings and package dimensions specified in the official datasheet before finalizing procurement orders.

Selection Notes

Select this component when high-efficiency power management requires low on-resistance combined with robust current handling capabilities. The TO-220AB package facilitates effective heat dissipation through direct mounting to heatsinks. Evaluate the thermal resistance parameters against the expected operating temperature range to ensure reliable performance under continuous load conditions without exceeding the maximum junction temperature limits.

Part Context

This MOSFET belongs to the DMT10 series from Diodes Incorporated, designed for general-purpose power switching applications. The product utilizes silicon technology optimized for low conduction losses and rapid switching transitions. It serves as a discrete semiconductor solution within broader electronic systems requiring efficient voltage regulation and current control.

Replacement Considerations

Consult the official Diodes Incorporated documentation for verified equivalent part numbers. Cross-reference pin configurations, thermal characteristics, and electrical ratings to ensure compatibility with existing circuit designs before implementing any substitution.