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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V POWERDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3142 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：2.9W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT12H007SPS-13 is a 120V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 120V, a continuous drain current (ID) of 80A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 8.9mΩ at VGS = 10V. The device features a total gate charge (Qg) of 44nC at VGS = 10V.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
- Thermally efficient PowerDI5060-8 package design for cooler operation
- Low RDS(ON) characteristics to minimize on-state power losses
- Package profile under 1.1mm suitable for thin application designs
Applications
- Switching applications
- DC-DC converters
- High efficiency power management systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the selected part matches the exact marking code T12H007SS for proper identification during assembly.
Selection Notes
Select this component when designing circuits requiring a 120V breakdown voltage with high current handling capabilities up to 80A. Consider the low thermal resistance from junction to case (1.2°C/W) for effective heat dissipation in dense layouts. Evaluate the gate charge requirements against the driver capability to ensure optimal switching performance.
Part Context
This component belongs to the Diodes Incorporated MOSFET product line, specifically designed for silicon technology. It falls under the category of single N-channel transistors intended for surface mount applications. The PowerDI series represents a specialized packaging solution aimed at improving thermal performance and reducing the overall footprint compared to traditional packages.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pin configurations and thermal characteristics.
FAQ
What is the maximum pulsed drain current for the DMT12H007SPS?
The maximum pulsed drain current (IDM) is 320A, specified with a 10μs pulse duration and a duty cycle of 1%.
Is the DMT12H007SPS qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.
