DMT12H060LCA9-7

$0.29

Description：MOSFET BVDSS: 101V~250V X4-DSN15
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:9278e56fd295 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V X4-DSN15
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：115 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 5 V
Vgs (Max)：±5.5V
Input Capacitance (Ciss) (Max) @ Vds：560 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DSN1515-9
Package / Case：9-SMD, No Lead

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DMT12H060LCA9-7

Overview

The DMT12H060LCA9 is a 115V N-channel enhancement mode MOSFET designed for high-efficiency power management. It features an X4-DSN1515-9 package with a 1.5mm x 1.5mm footprint. The device provides a maximum drain-source voltage (BVDSS) of 115V and continuous drain current (ID) of 3.5A at +25°C. Static on-resistance (RDS(ON)) is rated at 85mΩ max at VGS=4.5V, ID=3A, and 90mΩ max at VGS=2.5V, ID=2A. Gate charge (Qg) is typically 8nC.

Feature Summary

Low gate charge (Qg & Qgd) to support efficient switching performance
Integrated ESD protection rated up to 3kV HBM
Totally lead-free and fully RoHS compliant construction

Applications

Battery management systems
Load switches
Battery protections

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the component meets all applicable automotive qualification standards if required for the target application environment. Ensure proper handling procedures are followed due to the small form factor.

Selection Notes

Select this component when a compact 1.5mm x 1.5mm footprint is required for 115V applications. It is suitable for designs needing low on-state resistance at moderate gate drive voltages. Consider the thermal characteristics and safe operating area limits for high-current pulse scenarios.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup focused on minimizing on-state resistance. It utilizes the X4-DSN1515-9 package, which offers a small footprint compared to traditional surface-mount packages while maintaining robust electrical characteristics for modern power management circuits.