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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V U-DFN202
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：115 V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：475 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT12H060LFDF-13 is a 115V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device provides a maximum drain-source breakdown voltage (BVDSS) of 115V and a continuous drain current (ID) of 4.4A at TA = +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 65mΩ max at VGS = 4.5V and 70mΩ max at VGS = 2.5V. It includes an internal gate protection diode and is rated for operation between -55°C and +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features a low-profile 0.6mm package with a compact 4mm² PCB footprint, ideal for space-constrained applications.
- Includes an integrated gate protection diode and is ESD protected.
- Undergoes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robustness.
Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, and Transistors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration when sourcing. Confirm that the component meets RoHS, REACH, and Halogen/Antimony-free requirements if environmental compliance is mandatory for the target assembly. Ensure the design accommodates the U-DFN2020-6 package dimensions and recommended pad layout provided in the datasheet to maintain thermal and mechanical integrity.
Selection Notes
Select this component for applications requiring a 115V rating with a small form factor. The low RDS(ON) values at various gate voltages support efficient drive circuits. Consider the thermal resistance characteristics and the need for adequate copper area on the PCB to manage power dissipation within the specified junction temperature limits.
Part Context
This part belongs to the DMTH/DMT series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose switching and power management. The U-DFN2020-6 package is part of a family of ultra-small surface-mount devices aimed at portable and high-density electronics. The 'LF' designation indicates lead-free construction, and the suffix '-13' denotes the standard tape and reel quantity.
Replacement Considerations
Check datasheets for other Diodes Incorporated parts in the U-DFN2020-6 package with similar BVDSS and RDS(ON) specifications. Verify pinout compatibility and thermal characteristics before substituting.
