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Product Detailed Parameters
- Description：MOSFET N-CH 115V 3.4A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：115 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：251 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2020-6
- Package / Case：6-PowerXDFN
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Overview
The DMT12H090LFDF4-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 115V and a continuous drain current (ID) of 3.4A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 90mΩ at VGS=10V and 100mΩ at VGS=4.5V. Packaged in an X2-DFN2020-6 case with a 0.4mm profile, it supports a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
- Features a 0.4mm low-profile package ideal for space-constrained designs.
- Includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.
- Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Applications
- DC-DC Primary Switch
- Load Switch
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against your reel quantity requirements before procurement. Confirm that the X2-DFN2020-6 footprint matches your PCB layout design. Ensure compliance with RoHS 3 and REACH directives if required by your regional regulations. Validate thermal dissipation capabilities based on your specific copper plate area and ambient temperature conditions.
Selection Notes
Select this component when a compact form factor is required alongside moderate voltage handling up to 115V. Consider the 0.4mm height constraint for low-profile enclosures. Evaluate the gate threshold voltage characteristics for compatibility with your logic-level drive signals. Assess the thermal resistance values relative to your expected duty cycles and heat sinking capabilities.
Part Context
This part belongs to the DMT12H series from Diodes Incorporated, focusing on next-generation silicon MOSFETs. The series emphasizes balancing low RDS(ON) with fast switching speeds. The X2-DFN2020-6 package provides a small PCB footprint while maintaining adequate thermal performance for surface-mount assembly processes.
Replacement Considerations
Consult official datasheets for cross-referencing. Verify pinout compatibility and electrical parameters such as BVDSS and RDS(ON). Check package dimensions to ensure mechanical fit within existing board layouts.
FAQ
What is the maximum body diode continuous current rating?
The maximum body diode continuous current (IS) is rated at 3.4A at TA = +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
