DMT12H7M9LPSW-13

$0.54

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cbb1f25cf06b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

DMT12H7M9LPSW-13

Overview

The DMT12H7M9LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 12 A. Its maximum on-resistance is specified at 9 mΩ, with a gate-source voltage limit of ±20 V. Thermal performance includes a power dissipation capacity of 139 W and an operating temperature range from -55 °C to +150 °C.

Feature Summary

Single N-channel enhancement mode configuration for efficient switching control
Low on-resistance design optimized for minimizing conduction losses
PowerDI5060-8 package providing robust thermal management capabilities

Applications

DC-DC converter circuits
Motor drive applications
Load switch implementations

Procurement Notes

Verify the component authenticity against official Diodes Incorporated documentation. Confirm that the part number suffix matches the specific tape-and-reel packaging requirements. Ensure compliance with RoHS directives as indicated in the manufacturer's specifications before integration into production workflows.

Selection Notes

Select this component when a compact N-channel MOSFET with moderate current handling is required. The low on-resistance supports efficiency in power conversion stages. Verify that the 100 V rating aligns with the system voltage levels and that the PowerDI5060-8 footprint fits the PCB layout constraints.

Part Context

This part belongs to the DMT series of MOSFETs from Diodes Incorporated, designed for general-purpose switching applications. The series offers various voltage and current ratings within standardized packages to facilitate design flexibility across different power electronics projects.