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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V POWERDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3369 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT15H017LPS is a 150V N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 150V and a gate-source voltage rating of ±20V. The device offers a typical on-resistance of 14mΩ at VGS=10V and 18mΩ at VGS=4.5V, supporting continuous drain currents up to 58A at TC=+25°C. Total gate charge is typically 50nC, with input capacitance at 3369pF. Thermal resistance from junction to case is 1.4°C/W, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
- Thermally efficient PowerDI5060-8 package design for cooler operation
- Low RDS(ON) characteristics to minimize on-state power losses
- Fast switching speed combined with low input capacitance
Applications
- Synchronous rectifications
- Power switching
- Class D audio amplifiers
- Notebook battery power management
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard part number DMT15H017LPS-13 indicates a Tape & Reel packing quantity of 2,500 units. Confirm that the received component matches the exact marking code T1517LPS and date code format YYWW to ensure authenticity and traceability against the official datasheet specifications.
Selection Notes
Select this component for applications requiring high current handling within a thin profile. The 150V breakdown voltage accommodates systems exceeding standard 100V limits. Evaluate thermal performance using the 1.4°C/W junction-to-case resistance for heatsink calculations. Ensure gate drive voltages align with the specified thresholds for optimal conduction efficiency.
Part Context
This device belongs to the DMT series of N-Channel Enhancement Mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI® surface-mount technology platform, designed to replace traditional through-hole packages while maintaining superior electrical performance. The product line emphasizes minimizing on-resistance without compromising switching capabilities.
Replacement Considerations
Direct substitutes must match the 150V BVDSS, N-channel configuration, and PowerDI5060-8 footprint. Verify equivalent RDS(ON) values and thermal resistance ratings to maintain circuit performance. Cross-reference pin configurations to ensure Drain and Source terminal alignment.
