DMT15H017LPSW-13

$0.64

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a32494eaecca Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3369 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta), 89W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT15H017LPSW-13

Overview

The DMT15H017LPSW-13 is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package and features a maximum drain-source voltage (BVDSS) of 150V. The device exhibits a typical on-resistance (RDS(ON)) of 14mΩ at VGS=10V and 25.5mΩ at VGS=4.5V, supporting continuous drain currents up to 58A at TC=+25°C. Key electrical parameters include a gate threshold voltage range of 1.3V to 2.6V, total gate charge of 50nC, and a junction-to-case thermal resistance of 1.4°C/W.

Feature Summary

Features 100% unclamped inductive switching (UIS) testing for enhanced reliability.
Utilizes a thermally efficient PowerDI5060-8 package with a profile under 1.1mm.
Designed to minimize on-state losses through low RDS(ON) while maintaining fast switching speeds.

Applications

Synchronous rectification
Power switching
Class D audio amplifiers

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony-free as defined by the manufacturer's green product standards. Ensure compatibility with the specified PowerDI5060-8 footprint during procurement planning.

Selection Notes

Select this component for applications requiring high conversion efficiency and robust performance in thin form factors. Consider the 150V breakdown voltage and low input capacitance for power management circuits. Evaluate the thermal characteristics against the expected operating temperature range and duty cycle requirements to ensure safe operation within the specified limits.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-resistance with superior switching capabilities. The PowerDI5060-8 package provides a compact solution suitable for space-constrained designs, distinguishing it from traditional leaded transistor packages.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching BVDSS, RDS(ON), package type, and pinout configurations to ensure functional equivalence without circuit modification.