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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMT15H035SCT is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 150V and a continuous drain current (ID) of 46A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 35mΩ max at VGS = 10V and ID = 20A. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 2V to 4V, total gate charge (Qg) of 25nC typ, and input capacitance (Ciss) of 1600pF typ. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Features low on-resistance to minimize power losses during conduction.
- Designed with low gate charge characteristics to reduce switching losses.
- Guaranteed 100% unclamped inductive switching capability for robust operation.
Applications
- Power management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix 'SCT' corresponds to the TO220AB package configuration and tube packing quantity of 50 pieces per carrier as documented in the official datasheet. Confirm that the required thermal performance aligns with the specified junction-to-case thermal resistance values provided in the Maximum Ratings section.
Selection Notes
Select this component when designing circuits requiring a 150V breakdown voltage with high current handling capabilities up to 46A. Ensure the application's thermal environment allows for adequate heat dissipation given the TO220AB package constraints. Verify that the gate drive voltage meets the minimum requirements for optimal RDS(ON) performance.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a TO220AB surface-mount/dual-in-line style package designed for through-hole mounting. The device is compliant with RoHS directives and is classified as a halogen-free and antimony-free green product.
Replacement Considerations
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Cross-reference specifications such as BVDSS, RDS(ON), and package dimensions before implementation.
