DMT15H053SPSWQ-13

$0.32

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3e6dbdbacb76 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：66mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：814 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta), 90W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT15H053SPSWQ-13

Overview

The DMT15H053SPSWQ is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 150V and a continuous drain current (ID) of 24A at TC = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 46mΩ, with a maximum of 66mΩ at VGS = 10V and ID = 20A. Total gate charge (Qg) is typically 11.5nC. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Features low on-resistance to minimize on-state losses and low gate charge to reduce switching losses.
Includes 100% Unclamped Inductive Switching (UIS) testing in production for enhanced reliability.
Utilizes a thermally efficient PowerDI5060-8 package with a profile under 1.1mm.
Qualified for automotive applications with AEC-Q101 certification and IATF 16949 manufacturing.

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance and Halogen/Antimony-free requirements if environmental specifications are mandatory for the target assembly process.

Selection Notes

Select this component when designing circuits requiring a 150V rating with high efficiency. The low RDS(ON) and Qg values make it suitable for high-frequency switching applications. Ensure the thermal design accounts for the specified thermal resistance values based on the intended PCB copper layout and mounting conditions.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package. The device is designed for high-efficiency power management, offering a balance of voltage handling and current capacity in a compact form factor suitable for space-constrained electronics.

Replacement Considerations

Consult official Diodes Incorporated cross-reference lists or datasheets for verified substitutes. Do not assume compatibility based solely on matching BVDSS and ID ratings; verify pinout, package dimensions, and electrical characteristics against the original specification.

FAQ

Is the DMT15H053SPSWQ qualified for automotive use?

Yes, the component is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.