DMT2004UFV-13

$0.18

Description：MOSFET N-CH 24V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f1af376a4a36 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：24 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT2004UFV-13

Overview

The DMT2004UFV-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source breakdown voltage of 24 V and a maximum continuous drain current of 70 A at +25°C case temperature. The device offers low on-state resistance, specified as 5.0 mΩ max at VGS = 10V, 6.5 mΩ max at VGS = 4.5V, and 10.0 mΩ max at VGS = 2.5V. Total gate charge is 53.7 nC at VGS = 10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Low RDS(ON) ensures minimized on-state power losses across various gate drive voltages.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
100% Unclamped Inductive Switch (UIS) Test in Production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The -13 suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm that the required component matches the PowerDI3333-8 (Type UX) physical dimensions and pinout configuration for your PCB layout. Ensure compliance with RoHS and halogen-free requirements if mandated by your design specifications.

Selection Notes

Select this component for applications requiring high efficiency power management within a compact footprint. The low on-resistance supports high current handling up to 70A. Consider the thermal resistance characteristics and the need for adequate copper plane area for heat dissipation. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance points provided in the datasheet electrical characteristics.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) package, which is designed for high thermal efficiency and small board space utilization compared to traditional packages like SO-8. The series targets modern portable and high-density electronic designs.