DMT2004UPS-13

$0.21

Description：MOSFET N-CH 24V 80A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:939cf9f65109 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 80A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：24 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT2004UPS-13

Overview

The DMT2004UPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (VDSS) of 24V and a continuous drain current (ID) of 80A at TC = +25°C. The device offers a maximum on-resistance (RDS(ON)) of 5mΩ at VGS = 10V and 20A, or 6.5mΩ at VGS = 4.5V and 20A. Total gate charge (Qg) is 53.7nC at VGS = 10V. Thermal resistance from junction to case (RθJC) is 2.5°C/W.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching tested to ensure more reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS38955 Rev. 1-2 to confirm authenticity and specifications. Ensure the ordering suffix matches the required tape and reel packaging format. Check for RoHS compliance and halogen-free status as defined by the manufacturer's green product standards before finalizing procurement.

Selection Notes

Select this MOSFET for applications requiring low RDS(ON) and excellent Qgd x RDS(ON) figure of merit. The 24V rating and 80A current capability suit compact DC-DC converters. Consider the PowerDI5060-8 package for space-constrained designs needing high thermal efficiency without sacrificing electrical performance.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 case style, which provides a small footprint with enhanced thermal dissipation capabilities compared to traditional packages. The device is specifically engineered for modern power management systems demanding high density and efficiency.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference parameters such as VDSS, ID, RDS(ON), and package dimensions when evaluating alternatives.