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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 11.6A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
- Rds On (Max) @ Id, Vgs：6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA, 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15.9nC @ 10V, 57.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1010pF @ 13V, 4016pF @ 13V
- Power - Max：1.24W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type F)
- Grade：-
- Qualification：-
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Overview
The DMT26M0LDG-13 is a dual N-channel enhancement mode MOSFET array manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 surface-mount packaging and operates with a drain-source voltage of 25V. The device supports continuous drain currents of 11.6A at case temperature and 20.1A at ambient temperature, with a maximum power dissipation of 1.24W. Key electrical parameters include a gate threshold voltage of 2.2V, on-resistance of 7.5 Ohms, and gate charge values of 7.1nC and 15.9nC at specified conditions.
Feature Summary
- Dual non-symmetrical N-channel configuration within a compact PowerDI3333-8 package
- Enhancement mode operation suitable for low-voltage switching applications
- Extended thermal operating range from -55°C to +150°C junction temperature
Applications
- Low-side switching in portable consumer electronics
- Battery protection circuits requiring dual channel isolation
- General purpose signal switching in mobile devices
Procurement Notes
Verify the specific suffix designation against official Diodes Incorporated documentation to confirm package variant and tape-and-reel specifications. Ensure compatibility with standard SMD/SMT assembly processes for the PowerDI3333-8 footprint. Cross-reference datasheet revisions to validate current RoHS compliance status and lead time estimates prior to final procurement decisions.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. The 25V rating suits low-voltage systems where higher voltage ratings are unnecessary. Consider the 7.5 Ohm on-resistance for efficiency requirements in moderate current paths. Verify that the 1.24W power dissipation limit aligns with the thermal design of the target application environment.
Part Context
This part belongs to the Diodes Incorporated DMT series of dual MOSFET arrays. It shares the PowerDI3333-8 form factor with other low-voltage variants in the lineup. The device is designed to replace discrete single-transistor solutions, saving board space while providing independent control of two channels.
Replacement Considerations
Check for direct substitutes such as DMT26M0LDG-7 which shares identical electrical characteristics but differs in reel quantity. Verify pinout compatibility before substituting with other dual N-channel MOSFETs in similar packages.
