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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：77 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT3002LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 240A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 1.6mΩ at V_GS = 10V and 25A, or 2.5mΩ at V_GS = 4.5V and 25A. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI5060-8 (Type K) surface-mount package.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- Low profile construction suitable for thin application requirements
- Optimized for high conversion efficiency with minimized on-state losses
- Fast switching speed supported by low input capacitance
Applications
- DC-DC Converters
- Load Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and AEC-Q101 reliability standards required for the target environment. Ensure the procurement documentation matches the exact part number to avoid discrepancies in case style or electrical parameters.
Selection Notes
Select this component when a 30V rating and high current handling capability are required in a compact form factor. The low R_DS(ON) makes it suitable for power management circuits where conduction loss reduction is critical. Consider the thermal resistance characteristics and package dimensions to ensure compatibility with the intended PCB layout and cooling strategy.
Part Context
This component belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed as a next-generation device focusing on minimizing on-resistance while maintaining superior switching performance. The product line targets modern power management solutions requiring high efficiency and compact footprints.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
