DMT3003LFG-13

$0.26

Description：MOSFET N-CH 30V 22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4652ad0ef884 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 62W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT3003LFG-13

Overview

The DMT3003LFG-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum on-resistance of 3.2mΩ at VGS=10V and 5.5mΩ at VGS=4.5V, supporting continuous drain currents of 100A and 85A respectively at case temperatures of +25°C. The device offers high efficiency through low RDS(ON) and optimized switching characteristics, including a total gate charge of 44nC at VGS=10V. It is rated for 100% unclamped inductive switching (UIS) and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Minimizes on-state losses while maintaining superior switching performance
Occupies significantly less board area compared to SO-8 packages
Rated for 100% unclamped inductive switching (avalanche)
Compliant with AEC-Q101 standards for high reliability

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS directives and is halogen and antimony free if environmental compliance is required for the assembly process. Ensure the PowerDI3333-8 package dimensions align with the target PCB footprint design.

Selection Notes

Select this component for applications requiring compact form factors and high current handling capabilities within a 30V system. The low thermal resistance from junction to case facilitates efficient heat dissipation in dense layouts. Consider the gate threshold voltage and total gate charge when designing the driver circuitry to ensure optimal switching speeds and minimize switching losses during operation.

Part Context

This part belongs to Diodes Incorporated's line of N-channel enhancement mode MOSFETs designed for power management. It utilizes advanced technology to achieve low on-resistance and is housed in the thermally efficient PowerDI3333-8 package. The series is engineered to support high-density end products by reducing the overall board space required for power switching components.

Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, package type, and electrical parameters such as RDS(ON) and gate charge to ensure functional compatibility without redesigning the host circuit.