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Product Detailed Parameters
- Description：MOSFET N-CH 30V 22A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 62W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT3003LFGQ-7 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 100A at TC = +25°C. The device offers a low on-resistance of 3.2mΩ at VGS = 10V and 5.5mΩ at VGS = 4.5V. Total gate charge is 44nC at VGS = 10V. It operates within a temperature range of -55°C to +150°C and is housed in a PowerDI3333-8 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Advanced technology optimized for DC-DC converters
- Small form factor thermally efficient package enabling higher density end products
- 100% unclamped inductive switching tested in production
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity, as the datasheet lists both Tape & Reel options. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for your region. Ensure the manufacturing facility certification aligns with your supply chain quality standards before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high current handling capabilities within a compact footprint. The low RDS(ON) minimizes conduction losses, making it suitable for power management applications. Consider the thermal resistance characteristics and package size constraints during PCB layout to ensure optimal heat dissipation and system reliability.
Part Context
This part belongs to the DMT3003LFGQ series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI3333-8 format. The product line is specifically engineered to meet stringent automotive industry requirements, offering robust performance in demanding electrical environments.
Replacement Considerations
Consult the official datasheet or manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility based solely on similar specifications without verifying pinout and electrical parameters.
