DMT3004LFG-13

$0.27

Description：MOSFET NCH 30V 10.4A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:73d05d3ed967 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET NCH 30V 10.4A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT3004LFG-13

Overview

The DMT3004LFG-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 25A at case temperatures of +25°C and +70°C. The maximum on-resistance (R_DS(ON)) is specified as 4.5mΩ at V_GS = 10V with I_D = 20A, and 7.0mΩ at V_GS = 4.5V with I_D = 7A. Total gate charge (Q_g) reaches 44nC at V_GS = 10V. Thermal resistance from junction to case (R_θJC) is 3°C/W, supporting total power dissipation up to 42W under case cooling conditions.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Small form factor thermally efficient package enables higher density end products and occupies significantly less board area compared to traditional SO-8 packages.
Rated for 100% unclamped inductive switching (UIS) avalanche capability, ensuring robustness against transient energy events.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS and halogen-free status align with project specifications. Ensure thermal design accounts for the specific R_theta_JC values provided in the datasheet for adequate heat dissipation during operation.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for 30V applications. Consider the PowerDI3333-8 package for space-constrained designs needing improved thermal performance over standard plastic packages. Evaluate the gate charge and threshold voltage characteristics to ensure compatibility with available drive circuitry for optimal switching speeds.

Part Context

This device belongs to the DMT3004 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI3333-8 format, which provides a small footprint with enhanced thermal capabilities. The product is designed to meet modern demands for miniaturization and efficiency in portable and industrial electronics.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure electrical parameters, pinout configurations, and thermal characteristics match the original design requirements without compromising system reliability.