DMT3004LPS-13

$1.25

Description：MOSFET N-CH 30V 21A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:02dd611e4b8b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 21A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43.7 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 113W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT3004LPS-13

Overview

The DMT3004LPS-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8 packaging and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 140A at TC=+25°C, and a static drain-source on-resistance of 3.8mΩ at VGS=10V. The device features a gate-source voltage rating of +20V/-16V, total gate charge of 43.7nC, and operates within a temperature range of -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features an excellent Qgd x RDS(ON) figure of merit (FOM).
Includes 100% unclamped inductive switching capability to ensure reliability.
Utilizes a small form factor thermally efficient package enabling higher density end products.

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration with a packing quantity of 2,500 units. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the procurement channel provides valid traceability documentation for the manufacturing site and date code markings.

Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for compact designs. The PowerDI5060-8 package supports high thermal dissipation capabilities suitable for dense PCB layouts. Evaluate the 30V breakdown voltage against system requirements to ensure adequate margin during operation.

Part Context

This part belongs to the DMT3004 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for applications requiring minimized on-state losses and high switching efficiency. The product is qualified to JEDEC standards for high reliability.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the 'Q-suffix'. Verify pinout compatibility and thermal characteristics before substituting with other MOSFETs in similar packages.

FAQ

Is the DMT3004LPS-13 qualified for automotive applications?

No, this specific part number is not qualified to AEC-Q standards. For automotive applications requiring specific change control and AEC-Q qualification, please refer to the related automotive grade parts with the 'Q-suffix'.