DMT3006LDV-13

$0.22

Description：MOSFET 2N-CH 30V 25A PWRDI3333
Series：-

SKU:bdfb9691c183 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 25A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Rds On (Max) @ Id, Vgs：10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1155pF @ 15V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXC)
Grade：-
Qualification：-

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DMT3006LDV-13

Overview

The DMT3006LDV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXC) case with a maximum drain-source voltage of 30V. The device provides two independent channels, each rated for a continuous drain current of 25A at TC = +25°C and a maximum on-resistance of 10mΩ at VGS = 10V. Key electrical parameters include a gate-source voltage limit of ±20V, a total power dissipation of 0.9W to 1.8W depending on thermal conditions, and an operating temperature range from -55°C to +150°C.

Feature Summary

Dual channel configuration within a single compact package
Minimized on-state resistance for high-efficiency power management
Superior switching performance with low input capacitance
Totally lead-free and fully RoHS compliant construction

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging format. Confirm that the PowerDI3333-8 (Type UXC) mechanical dimensions align with the target PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling protocols during assembly.

Selection Notes

Select this component when space-constrained designs require dual N-channel MOSFET functionality. The 30V rating suits low-voltage DC-DC converters and load switches. Evaluate the 10mΩ on-resistance against thermal constraints to ensure junction temperatures remain within the specified -55°C to +150°C operational range under expected load currents.

Part Context

This part belongs to Diodes Incorporated's DMT series of dual MOSFETs, designed specifically for applications demanding reduced board space without sacrificing current handling capabilities. The PowerDI3333-8 package utilizes a molded plastic compound with a matte tin finish over a copper leadframe, offering a robust solution for surface-mount technology integration in consumer and industrial electronics.