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The DMT3006LFDF-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 14.1A at 25°C. The device offers a low on-state resistance of 7mΩ at VGS=10V and 10mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 footprint, it supports a junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance requirements, including RoHS and halogen-free specifications, prior to final procurement decisions.
Select this component when a compact surface-mount solution is required for low-voltage switching tasks. The U-DFN2020-6 package provides a small PCB footprint while maintaining adequate thermal performance for steady-state operations up to 14.1A. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.
This part belongs to the DMT3006LFDF series of N-channel MOSFETs from Diodes Incorporated. The family focuses on combining low on-resistance with fast switching speeds. The 'DMT3006LFDF-13' designation specifically indicates the standard reel packaging format containing 10,000 units per reel.
Consult the official datasheet for cross-reference recommendations. Verify pinout compatibility and electrical ratings against alternative suppliers before substitution.
The maximum continuous drain current is 14.1A at a case temperature of +25°C.
Yes, the device is qualified to AEC-Q101 standards for high reliability.