DMT3006LFDFQ-7

$0.13

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:536185df611f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.7V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Download product information

DMT3006LFDFQ-7

Overview

The DMT3006LFDFQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a 30V drain-source voltage and a maximum continuous drain current of 14.1A at 25°C. The device offers a low on-resistance of 7mΩ at VGS=10V, with a gate threshold voltage ranging from 1.0V to 3.0V. Total gate charge is 16.7nC at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Features a 0.6mm profile ideal for low-profile applications
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Battery management systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the datasheet to confirm reel size and quantity per reel. Confirm that the component meets IATF 16949 manufacturing requirements if strict automotive change control protocols are necessary for the intended application.

Selection Notes

Select this component when a compact footprint is required due to its small PCB footprint of 4mm². Ensure the design accommodates the specified thermal resistance values based on the copper plate area used. Verify that the gate drive voltage aligns with the optimal on-resistance performance characteristics provided in the electrical data.

Part Context

This part belongs to Diodes Incorporated's advanced information line of N-channel MOSFETs. It is specifically engineered to meet stringent automotive industry requirements. The product is manufactured in IATF 16949 certified facilities, ensuring consistent quality and reliability for high-volume production environments.