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Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT3006LFV-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-state resistance (RDS(ON)) of 7mΩ at VGS=10V, or 11mΩ at VGS=4.5V. The device supports a continuous drain current (ID) of 60A at TC=+25°C and a pulsed drain current (IDM) of 90A. It utilizes the PowerDI3333-8 package with a junction-to-ambient thermal resistance of 130°C/W on FR-4. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state losses for high efficiency power management.
- Small form factor thermally efficient package enables higher density end products.
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS, REACH, and halogen/antimony-free requirements if environmental compliance is required for the target assembly process.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI3333-8 package offers significant board area reduction compared to traditional SO-8 packages while maintaining adequate thermal performance for general power switching applications.
Part Context
This part belongs to the DMT3006 series of advanced silicon MOSFETs designed for high-efficiency applications. The 'LFV' designation indicates the specific PowerDI3333-8 (Type UX) case style, which provides a lead-free, green molding compound construction suitable for surface mount technology assembly processes.
Replacement Considerations
Consult the official datasheet for equivalent circuit diagrams and pinout configurations when evaluating potential substitutes. Ensure any replacement device matches the 30V BVDSS rating and compatible gate threshold characteristics for direct integration into existing layouts.
FAQ
What is the maximum continuous drain current for the DMT3006LFV?
The maximum continuous drain current is 60A at a case temperature of +25°C and 45A at a case temperature of +70°C.
Does the DMT3006LFV support avalanche energy ratings?
Yes, the device has an avalanche current rating of 24A and an avalanche energy rating of 29mJ based on low frequency and duty cycles to keep TJ = +25°C.
